| abstract |
The present invention discloses a method of manufacturing a high opening ratio and a high transmittance liquid crystal display. Disclosed is a method of manufacturing a high aperture and high transmittance liquid crystal display device by forming a fringe field between a counter electrode and a pixel electrode, the method comprising: forming a counter electrode on a transparent lower substrate; Forming an insulating film, forming a gate bus line on a predetermined portion of the first gate insulating film, and forming a gate pad portion outside the substrate, and sequentially forming a second gate insulating film, an amorphous silicon layer, and a doped semiconductor layer on the resultant Laminating a predetermined thickness of the doped semiconductor layer, the amorphous silicon layer, and the second gate insulating layer to define a thin film transistor region, and forming a pixel electrode on a predetermined portion on the substrate resultant; Etching a predetermined portion of the second gate insulating layer to open the gate pad portion, forming a source, a drain electrode, a data bus line and a data pad portion on a predetermined portion of the substrate, and forming a passivation layer on the substrate. And etching the passivation film to expose the data pad part, wherein the passivation film is formed such that the ratio of the dielectric constant to the thickness thereof is greater than the ratio of the dielectric constant to the thickness of the gate insulating layer. |