http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000066010-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1999-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_add515502662b4ce225e2b2c0dde359d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea075736a5f653dce9081c376e144c94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_850c457b8b0d17d0fce39a9e3a171880 |
| publicationDate | 2000-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000066010-A |
| titleOfInvention | Method for manufacturing SOI semiconductor substrate |
| abstract | The present invention discloses a method for manufacturing an SOI semiconductor substrate capable of removing boron ions remaining in the semiconductor layer of the SOI substrate, thereby improving the threshold voltage characteristic of the semiconductor element formed on the SOI substrate. The disclosed invention includes preparing a first and a second wafer, forming a boron ion layer at a predetermined depth in the first wafer, growing a buffered single crystal silicon layer on the boron ion layer, and buffering single crystal silicon. Growing a single crystal silicon layer on the layer, forming an oxide film for a buried insulating film on the single crystal silicon layer and the second wafer of the first wafer, respectively, and insulating the first wafer and the second wafer for the buried insulation Bonding the oxide film to abutment, removing the first wafer using the boron ion layer as an etch stop layer, and using the single crystal silicon layer as an etch stop layer, the first wafer and the buffer single crystal silicon remaining with the boron ion layer. Removing the layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114332-B2 |
| priorityDate | 1999-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.