http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000062733-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate | 2000-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2000-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000062733-A |
| titleOfInvention | Plasma etching of silicon using fluorinated gas mixtures |
| abstract | The method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C) comprises supplying the gas to a chamber, and Igniting the plasma, and etching the silicon material layer in the chamber, thereby increasing the mask selectivity while increasing the silicon etch rate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100973305-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210034719-A |
| priorityDate | 1999-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.