http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000060332-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_550ee32fd6cbda761835e6e3158e10f9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 |
| filingDate | 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6406f9237a184dc9e412200eecda8882 |
| publicationDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000060332-A |
| titleOfInvention | Method for forming metal films |
| abstract | A method of forming a metal-containing film having excellent film quality is disclosed. The metal-containing film forming method of the present invention is characterized in that, when forming a metal-containing film on a silicon substrate by chemical vapor deposition, a deuterium-containing gas is used to promote the deposition reaction and to improve the film quality of the metal-containing film. According to the present invention, since the metal-containing film is stably formed on the silicon substrate, the reliability of the semiconductor device can be improved. In addition, since impurities remaining after the formation of the metal-containing film can be removed by annealing at a relatively low temperature, a semiconductor device having excellent characteristics can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100500698-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0199166-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7485349-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7141278-B2 |
| priorityDate | 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.