http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000059872-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1999-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b433e7de4273bdec29c0eaa58689caf |
| publicationDate | 2000-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000059872-A |
| titleOfInvention | Progress of Forming Ultrathin Gate Oxide using Trideuterium nitrate |
| abstract | The present invention relates to a process for forming an ultrathin film insulating film for semiconductor devices using ND 3 gas.n n n According to the present invention, after forming an insulating film on a silicon wafer, using an ND 3 gas as a nitrogen source, heat treatment is performed at 600 ° C. to 1000 ° C. for 5 to 100 minutes at normal or low pressure, or for 1 to 100 seconds at a temperature range of 800 ° C. to 1100 ° C. Nitrogen doping is performed on the insulating film by rapid heat treatment or by plasma treatment for 5 to 100 minutes at a low pressure and a temperature of less than 600 ℃. In addition, by using deuterium (D 2 ) simultaneously with the ND 3 gas, the amount of nitrogen to be added to the insulating film can be controlled.n n n An object of the present invention is to form an ultra-thin film insulating film for semiconductor devices using ND 3 gas instead of NH 3 used as a conventional nitrogen doping gas to eliminate electron trapping by residual hydrogen, a problem of the conventional NH 3 process. To solve and improve the device characteristics and reliability by the optimum concentration of nitrogen. |
| priorityDate | 1999-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.