| abstract |
Provided is a semiconductor device having good noise characteristics.n n n In a semiconductor device provided with a signal input pad 116 and an amplifier stage for amplifying a signal inputted to the signal input pad on a semiconductor substrate 101 or a well, the semiconductor device 101 includes a lower portion of the input pad and an input pad to elements of the amplifier stage. Below the wiring 115, a low resistance layer 121, in particular, a silicide layer, is provided with a semiconductor substrate or a well and a coin position. Since the low resistance layer lowers its potential to ground, the substrate resistance is reduced, the thermal noise of the substrate is reduced, and the noise entering the amplifier stage can be reduced through the interlayer film capacitance, and the noise reduction as a whole semiconductor device can be achieved. Can be. The low resistance layer may be a silicide film 142 on the gate polysilicon film 141 without directly contacting the substrate. |