| abstract |
Remove unnecessary deposits generated in the thin film forming apparatus by pyrolysis of pentaethoxy tantalum or tetraethoxysilane without damaging the reactor, baseball, parts and piping of the silicon oxide film forming apparatus or the tantalum oxide film forming apparatus. Cleaning gas employed in order to. The cleaning gas is HF gas; And at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluorine gas, a bromine fluoride gas, and an iodine fluoride gas. |