http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000046075-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb07d3ec919c491520855f672b62ebba |
| publicationDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000046075-A |
| titleOfInvention | Copper metal wiring formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a copper metal wiring of a semiconductor device, wherein a cleaning process for removing particles and metal ions remaining after a chemical mechanical polishing process during a copper metal wiring forming process is performed. Is applied to brush scrubbing, first in a first brush station, first flowing deionized pure water (DIW) to prevent rapid surface damage from chemical use. After the rinse process, the diluted HF and BTA mixed solution is rinsed, and the deionized pure water is removed again to remove HF and BTA, followed by the second rinsing process. Remove particles and metal ions, and in the second brush station, HF and B, which may be present on the wafer from the first brush station The first rinse is carried out by flowing deionized water to remove TA, and the washed process is carried out by diluting diluted acetic acid (CH 3 COOH), and the second rinsed by flowing deionized water again to remove acetic acid. By removing the metal ions remaining on the insulating film through the process, and then drying the wafer using pure water from which the ultraviolet (UV) and ions are removed in the drying equipment (SRD) to complete the cleaning process, A method of forming a copper metal wiring of a semiconductor device capable of effectively removing particles and metal ions is described. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100702802-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101044379-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100467495-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100847835-B1 |
| priorityDate | 1998-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.