http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000045862-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4ec59d5ace1b5907eadfb2eacfd4ce9 |
| publicationDate | 2000-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000045862-A |
| titleOfInvention | Method for manufacturing high dielectric constant capacitor with plug poly |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a high dielectric constant capacitor having a plug poly, and in particular, the method is connected to a semiconductor device through a contact hole of an interlayer insulating film for inter-device insulation on a semiconductor substrate having a semiconductor device and is doped with impurities. After the formation of the plug poly made of polysilicon, an anti-oxidation film formed of tantalum silicide nitride material (TaSiN) is formed on the top surface of the plug poly, and the lower layer made of a conductive layer is connected to the anti-oxidation film on the interlayer insulating film. After forming an electrode, and forming an inter-electrode high dielectric thin film on the upper surface of the lower electrode, an upper electrode made of a conductive layer is formed thereon. Accordingly, the present invention prevents the growth of the natural oxide film generated at the interface of the plug poly during the high temperature oxidation process of the dielectric thin film to improve the electrical connection between the lower electrode and the plug poly. |
| priorityDate | 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.