http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000044882-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a1502e0445969682ed86a48e2bc4a27 |
| publicationDate | 2000-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000044882-A |
| titleOfInvention | Shallow Trench Isolation Method for Semiconductor Devices |
| abstract | The present invention relates to a method for forming a shallow trench isolation layer of a semiconductor device, wherein the narrow active region and the isolation region are excessively etched or wide active after the trench planarization process due to the step between the wide active region and the wide isolation region after forming the trench buried oxide In order to solve the problem in which the trench buried oxide film remains on the region, a plurality of active regions and a narrow field region are defined, and an etching resist layer pattern having the field region open is formed on the semiconductor substrate, and the etching process is performed. Etching a semiconductor substrate by an etching process using a resistive layer pattern to form a plurality of wide and narrow trenches, forming a trench buried oxide film over the entire structure including the trench, and forming the trench buried oxide film on the wide active region. Removing a portion, and Disclosed is a method of forming a shallow trench isolation layer in a semiconductor device, which can improve the reliability of the isolation layer by sequentially performing a step of removing the etch resistive layer pattern after polishing the lip oxide layer to leave the trench buried oxide layer in the trench. do. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100954418-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100741581-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100781871-B1 |
| priorityDate | 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 17.