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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2000-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000044857-A
titleOfInvention Method of forming contact plug of semiconductor device
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact plug of a semiconductor device, and to etching a part of an interlayer insulating layer by an etching process using a photoresist pattern to form a via hole through which a lower metal wiring is exposed, and filling a metal into a contact hole by electroless plating. By removing the photoresist pattern later to form the contact plug, the manufacturing process step and process time can be reduced compared to the contact plug forming process using a metal buried and etch back process such as tungsten, thereby lowering the manufacturing cost of the product. And a method for forming a contact plug of a semiconductor device capable of increasing the productivity of the product and improving the contact resistance.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8497207-B2
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priorityDate 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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