http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000035640-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 1999-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d209bbd65cb425a0ef964ece1a6fad85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_284aef6f73aa4f118e6ab6bc6e587118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ddec8ae0a22c14bd416db16440ae74 |
| publicationDate | 2000-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000035640-A |
| titleOfInvention | Structure and method for improving low temperature copper reflow in semiconductor features |
| abstract | It has been found that complete copper filling of semiconductor shapes, such as trenches and vias, can be achieved using copper reflow processes without trapped void formation when part of the unstructured shaped structure prior to reflow includes capillaries in shape. The volume of the capillary here represents 20 to 90%, preferably 20 to 75% of the original shape volume before being filled with copper. The aspect ratio of the capping portion is preferably at least 1.5. The maximum opening dimension of the capping portion is at least about 0.8 μm or less. Preferred substrate temperatures during the reflow process include immersion or temperature ramp-up or ramp-down at individual temperatures at which the substrate experiences a temperature in the range of 300 to 600 ° C, preferably 300 to 450 ° C. By controlling the proportion of unfilled shape volume during the reflow process when the aspect ratio of the shape is at least 1.5 and taking advantage of surface tension and capillary, the copper filled material includes capillaries without voids along the wall of the shape. It is easily filled into. The method of application of the final copper layer prior to reflow (the copper layer comprises capillaries not filled in shape) is electroplating, although CVD or vacuum deposition or other conformal layer forming techniques can be used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190022465-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160132139-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210020963-A |
| priorityDate | 1998-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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