http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000031371-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63abc29c9fc91122a7282654bed278a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef5e806b4305d66aeeff0736110b7494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a6459de548c8e216418fdb35c83723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9997dc6113a3302e3e692fd5fb01622
publicationDate 2000-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000031371-A
titleOfInvention Monitoring etching amount of semiconductor substrate by measuring photoresist consumption
abstract The present invention relates to an etching amount monitoring method of a semiconductor substrate by measuring photoresist consumption, and an insulating film, a material film, and a photoresist film pattern are sequentially formed on the semiconductor substrate. After measuring the thickness of the photoresist film pattern on the active region, the thickness of the material film, the insulating film and the semiconductor substrate is etched using the photoresist film as a mask, wherein the thickness of the photoresist film during the etching process Consumed. Next, the thickness of the photoresist film pattern on the active region is measured again, and the consumption amount of the photoresist film pattern before and after etching is calculated. Subsequently, the calculated consumption is converted into an etching amount of the semiconductor substrate. By using the etching amount monitoring method of the semiconductor substrate through the measurement of the photoresist consumption, it is not necessary to cut the wafer to measure the etching amount of the substrate by monitoring the consumption amount of the photoresist film and measuring the etching amount of the semiconductor substrate. It can reduce the cost and improve the throughput of the process.
priorityDate 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 16.