http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000031371-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate | 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63abc29c9fc91122a7282654bed278a2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef5e806b4305d66aeeff0736110b7494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a6459de548c8e216418fdb35c83723 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9997dc6113a3302e3e692fd5fb01622 |
publicationDate | 2000-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20000031371-A |
titleOfInvention | Monitoring etching amount of semiconductor substrate by measuring photoresist consumption |
abstract | The present invention relates to an etching amount monitoring method of a semiconductor substrate by measuring photoresist consumption, and an insulating film, a material film, and a photoresist film pattern are sequentially formed on the semiconductor substrate. After measuring the thickness of the photoresist film pattern on the active region, the thickness of the material film, the insulating film and the semiconductor substrate is etched using the photoresist film as a mask, wherein the thickness of the photoresist film during the etching process Consumed. Next, the thickness of the photoresist film pattern on the active region is measured again, and the consumption amount of the photoresist film pattern before and after etching is calculated. Subsequently, the calculated consumption is converted into an etching amount of the semiconductor substrate. By using the etching amount monitoring method of the semiconductor substrate through the measurement of the photoresist consumption, it is not necessary to cut the wafer to measure the etching amount of the substrate by monitoring the consumption amount of the photoresist film and measuring the etching amount of the semiconductor substrate. It can reduce the cost and improve the throughput of the process. |
priorityDate | 1998-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 16.