| abstract |
When mounting a semiconductor element, a lead frame, or the like on a ceramic substrate, the high-strength reliability is achieved without the damage or deformation of the substrate caused by the conventional soldering or bonding using a copper-copper oxide process. Provides a high copper circuit bonded substrate.n n n A first intervening layer comprising a copper cladding material layer or a high melting point metal layer in order from the base material with a brazing filler material layer mainly composed of silver and copper containing an active metal on a ceramic substrate, and Ni, Fe, Cu is used as a main component and its melting point is a two-layered interlayer with a second intervening layer of 100 DEG C or less, or any intervening layer is formed thereon, and copper is the main functional layer thereon. A copper circuit bonded substrate having a conductor layer at least 0.05 mm shorter than that of the intervening layer in the width direction is used.n n n Further, a copper circuit bonded substrate having an outer layer containing Ni as a main component on the upper surface of the base substrate is used. The semiconductor device is mounted on the above substrate. |