http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000027374-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 1998-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5f3130019147dea0e5b7de4b6608f36
publicationDate 2000-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000027374-A
titleOfInvention Contact manufacturing method of semiconductor device
abstract According to the present invention, after forming the gate electrode and the transistor in order to form contact wires capable of minimizing substrate damage due to misalignment, the insulating film is subjected to two steps (first insulating film: an insulating film having a slow etching rate, and a second insulating film: etching rate). Fast insulating film), and only a partial region is subjected to blanket plasma etching to leave a part of the second insulating film on the sidewall of the first insulating film. Subsequently, when the photo process for contact patterning is performed, the spacer of the lower metal interconnect layer performs transient etching by using the characteristic that the second insulating layer has a lower etching speed than the first insulating layer (ie, the second insulating layer performs a kind of masking role). Complete the etch without receiving it.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100407987-B1
priorityDate 1998-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680

Total number of triples: 17.