http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000024497-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a2f27c13d69f79f0ec21cea29118e3f5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B17-7032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-04 |
| filingDate | 2000-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac5ec4acd05631e5b27bf7aaf3b9f8ca |
| publicationDate | 2000-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000024497-A |
| titleOfInvention | Diamond thin film and bulk formation method by laser ablation combined with high voltage discharge plasma CVD |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a diamond thin film or bulk by a mixing method (hereinafter referred to as a lasma mixing method) in which a laser ablation method and a high voltage discharge plasma chemical vapor deposition CVD method are specifically combined. More specifically, the mixing method of the two methods complementary and specially combined to form a diamond on the substrate under hydrogen gas to surround the plasma zone to the reactor to increase the plasma density and increase the thin film deposition rate efficiency. There is provided a method of forming a diamond film or bulk further comprising a stacked process.n n n In the method for forming a diamond thin film or bulk according to the present invention, the laser beam 2 generated from an excimer or yag laser 1, which is a laser source, is collected by a lens 3 to collect a vacuum chamber 4. The ablation phenomenon (laser plume 7) that occurs on the surface when irradiated to a fixed high purity graphite target (6) which does not require a separate rotary motor (5) located at the same time, and simultaneously the graphite cathode (6) and graphite A method in which the discharge plasmas 9 generated between the anodes 8 are mixed so as to be mixed, and due to the high temperature in the center of the generated plasmas 9, the heating plasma 9 is placed on the graphite anodes 8 without being heated by a separate substrate heater 10. When diamond is formed on the substrate 11, a process of placing a reactor 12 enclosing a plasma zone and applying a constant hydrogen gas into the reactor 12 located inside the vacuum chamber 4 from the outside is performed. To exert its function effectively on a de tube 13, a large amount of atomic hydrogen board 11 is supplied by a characterized by further comprising the step of to form a high-quality diamond thin film or a bulk. |
| priorityDate | 2000-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.