http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000020614-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76032607481efe163c2e3e4f0c3b35b0 |
| publicationDate | 2000-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000020614-A |
| titleOfInvention | Etching Method of Semiconductor Device |
| abstract | The present invention uses a mixed gas containing chlorine (Cl), fluorine (F) and carbon (C) as an etching gas during the etching process of the polysilicon film using an inductive coupled plasma type etching equipment The present invention relates to an etching method of a semiconductor device to be etched.n n n The present invention uses chlorine gas (Cl 2 ) and carbon tetrafluoride gas (CF 4 ) as an etching gas, and is characterized by using a low process pressure and a high bias power.n n n Therefore, it is possible to prevent the occurrence of the poly stringer and improve the etching uniformity, thereby improving the yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101486553-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009116833-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009116833-A2 |
| priorityDate | 1998-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.