http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000019072-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d7ed9c951dc6a4f547fa7dcdb888dd |
| publicationDate | 2000-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000019072-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | A method for forming a metal wiring in a semiconductor device for preventing short between metal wirings is disclosed. In this invention, the 1st metal wiring layer which consists of a some line is formed on a semiconductor substrate. An intermetallic insulating film covering the first metal wiring layer is formed while exposing the top surface of the semiconductor substrate between the lines of the first metal wiring layer. The first insulating layer is filled on the exposed semiconductor substrate to planarize the upper surface of the resultant product. The planarized result is covered with a second insulating film. A second metal wiring layer is formed on the second insulating film. |
| priorityDate | 1998-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104812 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559020 |
Total number of triples: 15.