http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000018724-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 1998-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfdce955331a796eaf0b9fcbeeeecb03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e5b947bdd8c8d9834b1fd05fe029d6d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c2f35c61210775e7228041dbfbf3bdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62b14f19a736b91cccd54ab8d412e90b |
| publicationDate | 2000-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000018724-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device that improves the excessive removal of the inlet portion of the contact hole when forming a pattern including the contact hole.n n n In the method of manufacturing a semiconductor device of the present invention, after forming an insulating film on a semiconductor substrate, the adhesion between the insulating film and the photoresist to be applied on the insulating film is improved when a process for forming a pattern of the insulating film is performed. Nitriding the surface of the insulating film; And removing the nitrided insulating film so that the nitrided insulating film is formed in a pattern including a contact hole.n n n Therefore, according to the present invention, the productivity and reliability of manufacturing a semiconductor device are improved by eliminating defects, etc., generated during the process of forming a contact hole using an insulating film such as a BPS film. There is. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100710996-B1 |
| priorityDate | 1998-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 18.