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filingDate 1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2000-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000017656-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract In a semiconductor device having a multilayer copper wiring, a copper oxide having a thickness of 30 nm or more by oxidation, which performs the surface of another copper wiring corresponding to at least one lower layer of an arbitrary multilayer copper wiring layer at an oxidation rate of 20 nm / min or less. The semiconductor device which prevents reflection of exposure light from the lower layer copper wiring at the time of forming by trench by photolithography the trench for forming copper wiring through a damascene process is provided.
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