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filingDate 1997-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_499ed351ce632b48012e47466e37319d
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publicationDate 2000-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000016088-A
titleOfInvention Programmable metallized cell structure and method of manufacturing the same
abstract Programmable metallization cell 10 ("PMC") is a high temperature isomer such as chalcogenide-metal ion, and a plurality of electrodes 13, 14 disposed on the surface of the fast isomer and spaced at a set distance from each other (eg, , Positive and negative electrodes). Preferably, the high temperature thermometer comprises chalcogenides having Group IB and IIB metals of the periodic table, the anode comprises silver, and the cathode comprises aluminum or other conductors. When a voltage is applied to the anode and the cathode, nonvolatile metal dendrites grow from the cathode to the anode along the surface of the high temperature thermometer. The growth rate of dendrites is a function of applied voltage and time. The growth of dendrites can be stopped by removing the voltage and retreating by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrites affect the resistance and capacity of the PMC. The PMC can be embodied in various techniques such as memory devices, programmable resistor / capacitor devices, optics, sensors, and the like. Additional electrodes may be provided at the anode and cathode to act as the output or additional output of the device in sensing electrical properties that depend on the size of the dendrites.
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