| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
1998-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_458f0e085a5bd257155c8225a96de319 |
| publicationDate |
2000-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000015029-A |
| titleOfInvention |
Contact formation method of semiconductor memory device |
| abstract |
The present invention relates to a method for forming a contact of a semiconductor memory device which can reduce costs by simplifying a process of forming a DC of a cell and a core region. And first and second self-aligned contact pads are formed. A second insulating layer having poor step coverage is formed along the surfaces of the structures formed on the semiconductor substrate. The second insulating film is etched until the surfaces of the first and second self-aligned contact pads are exposed. After the first conductive film is formed on the entire surface of the semiconductor substrate, the first conductive film is etched flat so that a part of the thickness remains on the second insulating film. Next, after the second conductive film is formed on the first conductive film, the bit lines are formed by sequentially etching the second conductive film and the first conductive film using a bit line forming mask. At this time, the first conductive layer on the first self-aligned contact pad is over-etched to be electrically insulated from the bit line. By the contact forming method of the semiconductor memory device, a DC photo process in the cell region or a DC photo process in the BC, DC and core regions of the cell region is skipped when direct contact (DC) is formed between the cell region and the core region. Skipping can simplify the process and reduce costs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8872262-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7615815-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7767521-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7595529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100843877-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100443917-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7361591-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299827-B2 |
| priorityDate |
1998-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |