| abstract |
The present invention relates to a method for manufacturing a semiconductor device, in etching a RuO 2 thin film used as a storage electrode of a high dielectric constant, by adding nitrogen gas to the conventional oxygen to increase the etching rate by increasing the amount of oxygen radicals By using one O 2 + N 2 plasma etching gas, the etching rate and selectivity between the silicon oxide film are also improved, and the simplification of the process can be simplified since excellent directionality and contaminated damage layer are not formed on the sidewall after etching, and the gas itself Since it does not have toxicity, it is not harmful to the human body and does not affect environmental pollution at all. |