http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000013166-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1507d218b9e6294bbef355c2fde5d6a4 |
| publicationDate | 2000-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000013166-A |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming metal wiring in a semiconductor device, and an object of the present invention is to provide a blanket for planarization of a TEOS oxide film used as a barrier to prevent corrosion due to moisture penetration into metal lines when forming a multilayer metal wiring film. The present invention provides a method for forming a metal wiring in a semiconductor device that can prevent a wedge-shaped cracking phenomenon of a metal due to tensile stress generated after dentition. In the present invention for realizing the above object, in the metal line forming method of the semiconductor device in which the multilayer oxide wiring is formed by depositing a barrier oxide film in the state where the metal line is formed and flattening the blanket. Depositing a TEOS oxide film having a low etching rate above, applying and hard-baking a port register on the TEOS oxide film deposited in the step, and blanket-etching the hard-baked result in a predetermined thickness without a mask. And forming the second oxide film and the upper metal wiring in order and alloying the protective film by forming the second oxide film and the upper metal wiring in order in the above step, and forming the metal wiring to reduce the wet etching rate of the TEOS oxide film and the reduction of the tensil stress. It is possible to prevent the wedge-shaped cracking of the device, which increases device life and device reliability. It has the advantage of reducing the leak current in the control of metal. |
| priorityDate | 1998-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517 |
Total number of triples: 18.