http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000009446-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b9f9cd8f41ddd9b8e5bc26a4d68518 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32138 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate | 1998-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ecaf456481199018c08e5707d60a802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7c1fda8472e60d20cd24e431e08ff14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d88383d5420a0b559eda5ae2580c9fd |
publicationDate | 2000-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20000009446-A |
titleOfInvention | Etching Method of Copper Thin Film |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of etching a copper thin film used for metallization such as a semiconductor device, wherein the copper thin film is oxidized using ozone or oxygen or ozone plasma, and then β-diketone on the oxidized copper. The reaction may be performed by introducing a series of etching reaction gases or by oxidizing the copper thin film and simultaneously reacting with the etching reaction gases. Etching method of the copper thin film of the present invention is a method that can be etched at a lower temperature than the prior art while using a small amount of oxidizing agent and the etching reaction gas can efficiently control the etching rate according to the reaction conditions. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102030548-B1 |
priorityDate | 1998-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.