| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b946243e886504891ea38046b5f1fb20 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate |
1998-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfaa6ac2d849de3318cccf1049f8e2a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6eb2a179f3436ec665cb9660bf4feca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70469dc5032e29842922c57717566eac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_445fc9e5f5601a5220ad920c6bdf01c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb9e6ba7f45852e8a2e7645f58b1532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_688cdd12ce51b7e928c9a1ce3b4e4e82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48d1b0055e4779780df838be80b7a836 |
| publicationDate |
2000-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000008553-A |
| titleOfInvention |
Photoresist stripping liquid composition and photoresist stripping method using the same |
| abstract |
The present invention discloses a photoresist stripper composition for peeling a photoresist film from a substrate in a process of manufacturing a semiconductor device and a liquid crystal display device and a photoresist stripping method using the same. The photoresist stripper composition according to the present invention is characterized in that the organic amine compound, the diethylene glycol monoalkyl ether compound, and the alkyl pyrrolidone compound are mixed in a predetermined ratio. The dry etching, wet etching and / or ashing process The photoresist film deteriorated by the harsh conditions and the metal by-products etched from the lower metal film during the process can be easily peeled off at a low temperature in a short time, and the corrosion of the lower metal wiring during the peeling process can be minimized. In the subsequent rinsing process, it is possible to rinse only with water without using organic solvents such as isopropyl alcohol and dimethyl sulfoxide. It can be maximized. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7112795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02054156-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100370135-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200061913-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101304697-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107193187-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107193187-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100469160-B1 |
| priorityDate |
1998-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |