| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
1999-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3e6bc2c304b7b61886311eb66b1d71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ba51bc11fe957ccb37311f2a9cc2ea4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad86705b0bbe98b34a2223659fa8b019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53c87c4fd54f2a973efe55fd2086645 |
| publicationDate |
2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000006315-A |
| titleOfInvention |
Low-resistance salicide fill for trench capacitors |
| abstract |
The present invention relates to a method of manufacturing a trench capacitor having a refractory metal salicide as a component of the trench electrode in the lower region of the trench. Since trench electrodes with salicides exhibit reduced series resistance compared to conventional trench electrodes of similar dimensions, reduced ground rule memory cell layout and / or reduced cell access time is possible. The trench capacitor of the present invention is particularly useful as a component of DRAM memory cells. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100496382-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101030295-B1 |
| priorityDate |
1998-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |