http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000003744-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022 |
| filingDate | 1998-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_236c4dc5e68f4b2731ae8d0faf18422c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4909a21e22f3f2517e0c1c9521fc2ae8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8a59dd16f7928aabc266424311eab60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_391426235ae534aa43ac337a6a5008ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4699036203a0fba4f23712c0fa94ba63 |
| publicationDate | 2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000003744-A |
| titleOfInvention | Manufacturing method of optical bench for module of laser diode and photo diode |
| abstract | The present invention discloses a method of manufacturing a silicon optical bench capable of mounting a laser diode and a photodiode at the same time. According to the manufacturing method of the silicon optical bench of this invention, the photosensitive film | membrane of the silicon substrate in which the SiN film | membrane and the photosensitive film | membrane were sequentially exposed and developed is formed the photosensitive film pattern which divides the applied photosensitive film into three squares. After the exposed SiN film is removed, the photoresist pattern is removed, thereby forming a SiN mask pattern. The silicon exposed to the etching solution for selectively etching the silicon is etched at a side of the silicon at a predetermined angle and the base is etched flat to form an optical bench. The SiN mask pattern is removed, and metal patterns are formed in a portion where the SiN mask pattern is removed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100425100-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100453963-B1 |
| priorityDate | 1998-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 22.