http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000001478-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcf7095d26b5417a7ac804d73223f8d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9c5aeec1f8b8b9bfa325cf9d751e803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e1dc89ee0397389782c43ef372f0233 |
| publicationDate | 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000001478-A |
| titleOfInvention | Metal layer pattern formation method of semiconductor device using electroplating |
| abstract | A method of forming a metal layer pattern of a semiconductor device using electroplating is disclosed. The present invention comprises the steps of (a) forming an insulating film on the substrate; (b) forming a groove in the insulating film; (c) forming a metal layer filling the groove on the insulating layer to a first thickness; (d) thinning the thickness of the metal layer by an electrical method; And (e) etching the entire surface of the metal layer until the insulating layer is exposed. The electrical method means electroplating. As the power supply voltage of the electroplating, a DC voltage or an AC pulse voltage is used. In the latter case, etching and lamination of the metal layer are repeated, and the thickness of the metal layer is sequentially thinned. In the step (e), the physical, such as CMP, etch back, dry etching. Chemical etching methods are used. As such, by using a combination of the electroplating method and the physical and chemical methods to etch, the load of the overall etching process can be reduced, and the uniformity of the formed metal layer pattern can be increased. |
| priorityDate | 1998-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.