http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000001338-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7f6286099ce9b4c4f588af2998efe3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51a3fbbbfff26d247ab6d1c96bec729a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd5391e4b65cfa4f2ebec6892a4045b5 |
| publicationDate | 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000001338-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | 1. TECHNICAL FIELD OF THE INVENTIONn n n A method for manufacturing a semiconductor device.n n n 2. Technical problem to be solved by the inventionn n n The present invention provides a method for manufacturing a semiconductor device that can reduce the loss of a semiconductor substrate generated when the etching process is performed while the surface of the semiconductor substrate is exposed in the plasma etching chamber using the ESC method.n n n 3. Summary of the Solution of the Inventionn n n Between the chucking step of fixing the semiconductor substrate to the plasma etching chamber using the ESC method and the etching step, a gas transition step of flowing an etching gas without applying a bias power to the semiconductor substrate is performed so that the surface of the semiconductor substrate is removed in a subsequent etching step. It protects and suppresses the loss of a board | substrate.n n n 4. Important uses of the inventionn n n Used in semiconductor device manufacturing process. |
| priorityDate | 1998-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.