http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000001030-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1998-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd449ab6b303c8435c98097859547657 |
| publicationDate | 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000001030-A |
| titleOfInvention | Multilayer Etching Process |
| abstract | The present invention relates to a multilayer film etching process for preventing excessive etching caused by the etching gas remaining in the process of continuously etching the multilayer film. An object of the present invention is to prevent excessive etching by adding a process that can remove the etching gas between the steps in the continuous etching process. In order to achieve the above object, the present invention provides a method of preparing a silicon substrate including a first layer film and a second layer film, forming an etch mask on the second layer film, and etching the second layer film using an etching gas. And removing the etching gas remaining on the silicon substrate, and etching the first layer film. |
| priorityDate | 1998-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.