http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000000778-A

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filingDate 1998-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b23e84a8fc93cab9642abeeb90afaaf
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publicationDate 2000-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000000778-A
titleOfInvention Indium bump manufacturing method using plasma
abstract In order to increase the height of the indium bumps and to improve the tensile strength of the bumps, the present invention is directed to depositing a protective layer, which is a material having no binding force with indium, on a chip; Opening a portion of the conductive metal pad where the bump is to be placed in the protective layer using photoresist patterning; Depositing UBM thereon without removing the patterning photoresist; Removing the photoresist to pattern a diffusion barrier layer; Forming an indium bump on the UBM having a larger cross-sectional area than the UBM; Reflow by exposing the indium bump to a plasma; Provided is a method of manufacturing indium bumps using plasma.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100411144-B1
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priorityDate 1998-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.