| abstract |
The present invention aims to naturally scribe GaN light emitting device chips (LD, LED) along the cleaved surface of the substrate, and in the case of LD, the cleaved surface is a resonator surface. Use single crystal. When a GaN-based crystal of a light emitting element is laminated on a GaN substrate, thin film crystals having the same orientation as the substrate grow. The light emitting device chip can be separated by cleaving the substrate from the {1-100} plane. In the case of LEDs, there are triangular, equilibrium quadrilateral, lozenge, and hexagonal chips. In the case of LD, the cleaved surface is a parallel quadrilateral or rectangular chip which becomes a resonator. |