Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-02 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-02 |
filingDate |
1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
1999-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-19990088545-A |
titleOfInvention |
Silica-based coating film on substrate and coating solution therefor |
abstract |
Tetraethoxysilane formed by hydrolysis in a relatively low concentration of an alcohol solvent, and then hydrolyzed in the presence of a basic catalyst such as ammonia using an aprotic polar solvent such as N-methylpyrrolidone instead of an alcohol solvent, and A unique coating solution containing a hydrolysis condensation product of a polyalkoxysilane compound such as monomethyltrimethoxysilane is applied onto the surface of the substrate, dried and then fired at 350 to 800 ° C. to give a silica having a low dielectric constant of 2.5 or less. A film can be formed on the surface of the substrate and provided as a planarization film or an interlayer insulating film. |
priorityDate |
1998-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |