http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990087519-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate | 1997-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990087519-A |
| titleOfInvention | Thermal Treatment of Embossed Photoresist Compositions |
| abstract | The present invention relates to the treatment of diazonaphthoquinone sulfonate ester-novolak embossed photoresist after a flash exposure (momentary PEB) process. This method treats higher temperatures (≧ 130 ° C.) and very short firing times (≦ 30 seconds) over the resist, preferably the lower antireflective coating, as compared to conventional post exposure bake (PEB) processes. This treatment greatly improves the resolution, process tolerance, thermal strain temperature, resist adhesion and plasma etch resistance of the resist. |
| priorityDate | 1996-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.