http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990086793-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990086793-A |
| titleOfInvention | Indium-tin-oxide sputtering target and manufacturing method thereof |
| abstract | The present invention relates to an ITO sputtering target used for forming a transparent conductive film formed on a substrate for a liquid crystal display (LCD) device by a sputtering process, and a manufacturing method thereof.n n n Of the present invention, indium-tin-oxide (ITO) sputtering target, In 2 O 3 single-phase (1-Phase) on SnO 2 will present as an impurity (impurity) form or In 4 Sn 3 O to 12 daily SnO intended to 2 is present as an impurity (impurity) form, its preparation method, indium oxide (in 2 O 3) and tin oxide (SnO 2) the step of pulverization and mixing at a predetermined ratio, the mixture of indium oxide (in 2 O 3 ) sintering the powder and tin oxide (SnO 2 ) powder into a single phase, and quenching the sintered result to form a single phase indium-tin-oxide (ITO) water, Is done.n n n Therefore, the formation of the nozzle portion or the redeposition layer on the surface of the sputtering target is suppressed, thereby preventing blackening or falling of these particles and acting as particles to form a good ITO conductive film. |
| priorityDate | 1998-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.