http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990086258-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1998-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990086258-A |
| titleOfInvention | Manufacturing method of chip type solid electrolytic capacitor |
| abstract | According to the present invention, after forming the dielectric oxide film 2 on the metal plate surface 1, the first insulating film 5 is formed so that the anode lead portion 4 and the solid electrolyte layer forming portion 3 are exposed. In order to protect the oxide film from physical stress, a portion of the solid electrolyte forming portion is formed with the HF protective insulating layer 6, and then the precursor layer 8 is dropped in a certain amount so as to cover the HF protective insulating layer. Form a solid electrolyte layer (9) by contacting the electrode layer for electrolytic polymerization (7) with the precursor layer formed on the chemical protection foil protective layer, and then carbon (10) and silver paste (11) on the solid electrolyte layer. The present invention relates to a method for manufacturing a chip-type solid electrolytic capacitor which can improve the leakage current characteristics and the production yield of the product by forming a solid electrolytic capacitor by sequentially forming. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115512966-A |
| priorityDate | 1998-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.