http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990086256-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1998-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990086256-A |
| titleOfInvention | Manufacturing method of chip type solid electrolytic capacitor |
| abstract | The present invention forms a heterocyclic solid electrolyte layer (5) on the dielectric oxide film layer (2) by electrolytic polymerization, and then recovers the damaged oxide film layer by electrolytic polymerization through a reoxidation process under the same conditions as the initial regeneration, or a recyclability process The present invention relates to a chip-type solid electrolytic capacitor manufacturing method characterized in that it is determined that the occurrence of a short or discoloration of the heterocyclic solid electrolyte layer is defective. |
| priorityDate | 1998-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.