http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990085560-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1998-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990085560-A |
| titleOfInvention | Acetal polymer and its manufacturing method and method for producing micropattern using this polymer |
| abstract | The present invention relates to an acetal-based polymer for TSI photoresist, a method for producing the same, and a method for manufacturing the photoresist pattern using the polymer, wherein the formation of a micropattern using an ultraviolet ray such as ArF or a light source such as E-beam, X-ray, EUV, etc. The photoresist formed on top of the layer to be etched to prevent the collapse of the photoresist pattern or the lack of resolving power generated at the time of the photoresist includes an acetal having a high heat resistance and is a chemically amplified photoresist capable of resolving even at a small amount of energy. It is possible to form, and thereby the technology to enable high integration of the semiconductor device. |
| priorityDate | 1998-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.