http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990084647-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1998-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990084647-A |
| titleOfInvention | Capacitor Formation Method in Semiconductor Memory Device |
| abstract | The present invention relates to a capacitor forming method of a semiconductor memory device for improving the Cmin / Cmax characteristics of the capacitor, a material layer for the capacitor lower electrode doped with arsenic (As) is formed on the insulating layer including a contact hole. The material layer is patterned to form the lower electrode of the capacitor, and an HSG film is formed on the surface of the lower electrode of the capacitor. After the capacitor dielectric film is formed on the insulating layer including the HSG film, an upper electrode of the capacitor is formed on the capacitor dielectric film. According to such a capacitor formation method of a semiconductor memory device, an HSG film is formed on an amorphous conductive layer doped with arsenic, and a capacitor is formed by using Ta 2 O 5 as a capacitor dielectric film to form a depletion layer in the HSG film in the HSG film. The thickness can be reduced and the Cmin / Cmax properties can be improved. |
| priorityDate | 1998-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.