| abstract |
Titanium aluminum nitrogen ("Ti-Al-N") is deposited on the semiconductor substrate to act as an antireflective coating. For the connection line fabrication method, the Ti-Al-N layer acts as a cap layer 56 which prevents unnecessary reflection of lithographic light (ie photons) during fabrication. For field emission display devices (FEDs) 150, the Ti-Al-N layer 200 prevents light originating at the anode of the display screen 118 from penetrating the transistor contacts that interfere with device operation. For this connection line embodiment, an aluminum conductive layer 54 and a titanium-aluminum underlayer 52 are formed under the antireflective cap layer. The Ti-Al underlayer reduces shrinkage occurring in the aluminum conductive layer during heat treatment. |