http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990079274-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990079274-A |
| titleOfInvention | How to Form Contact Holes |
| abstract | The present invention relates to a method of forming a contact hole for preventing cracking of an SOG layer without an additional process such as an etch back process of a spin on glass (SOG) layer.n n n The method of forming a contact hole of the present invention includes forming a metal layer on a portion of an insulating substrate, forming a first insulating film, an SOG layer, and a second insulating film on an insulating substrate including the metal layer, and forming a second layer on an upper portion of the metal layer. First etching the insulating film to a predetermined thickness, and etching the second insulating film, the SOG layer, and the first insulating film using the first etched second insulating film as a mask to form a contact hole on the metal layer. Characterized in that made. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040022627-A |
| priorityDate | 1998-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680 |
Total number of triples: 15.