| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1999-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19990078425-A |
| titleOfInvention |
Process for the production of semiconductor device |
| abstract |
(A) forming a recess in an insulating intermediate layer formed on the substrate such that a portion of the substrate is exposed to the bottom of the recess; (B) forming an recess on the insulating intermediate layer including the interior of the recess by an electroless plating method. Forming an electrically conductive layer, and (C) forming a second electrically conductive layer on the first electrically conductive layer to fill the recess with a second electrically conductive layer. Initiate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100690993-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100858873-B1 |
| priorityDate |
1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |