http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990078247-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14654
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-359
filingDate 1999-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1999-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19990078247-A
titleOfInvention Solid-state image device
abstract Gates charges such as MNOS type, MONOS type, floating gate type, etc., in which a nonvolatile memory transistor is disposed outside the image circle 3 on the solid state imaging device 1 so that light is not incident on the solid state imaging device during use. The present invention relates to a solid-state imaging device having a peripheral circuit portion having a nonvolatile memory transistor 4 having a structure in which the threshold voltage is changed by being trapped in an insulating means under an electrode.
priorityDate 1998-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340

Total number of triples: 20.