http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990078133-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-061 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 |
| filingDate | 1999-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990078133-A |
| titleOfInvention | System and method for in-process cleaning of an ion source |
| abstract | Methods and systems for in-process cleaning of ion source 12 are provided. The ion source 12 includes (i) a plasma chamber 120 formed by chamber walls 112, 114, and 116 defining a boundary of the ionization region 120; (ii) a first mechanism (68) for introducing the source of ionizable doping gas (66) and the ionizable doping gas into the plasma chamber; (iii) a second mechanism 184 for introducing the cleaning gas into the source of the cleaning gas 182 and into the plasma chamber; And (iv) an excitation device 130 partially disposed within the chamber that energizes the ionizable doping gas and the cleaning gas to produce a plasma in the plasma chamber. The plasma includes a composition in which the doping gas is dissociated and ionized and the cleaning gas is dissociated and ionized. The composition in which the cleaning gas is dissociated and ionized reacts with the composition in which the doping gas is dissociated to prevent formation of deposits of elements contained in the doping gas on the surfaces of the chamber walls. This cleaning gas is nitrogen trifluoride (NF 3 ), and the ionizable doping gas is phosphine (PH 3 ) or arsine (AsH 3 ). The mass flow controller controls the ratio of the cleaning gas to the ionizable doping gas introduced into the plasma chamber, which ratio is greater than 0: 1 and preferably at least 3: 1. |
| priorityDate | 1998-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.