http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990072541-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990072541-A |
| titleOfInvention | A process for fabricating a device with shallow junctions |
| abstract | A device fabrication method is disclosed in which transient enhanced diffusion (TED) is used to obtain a desired dopant distribution in a crystalline substrate. In this method, both the dopant and the non-dopant are both inserted into the same area of the substrate. Diffusion of the dopant in the substrate during subsequent thermal annealing is affected by the non-dopant. The amount of non-dopant inserted into the substrate is selected to achieve a desired dopant distribution in the substrate with respect to the subsequent heat treatment. The concentration of non-dopant is in the range of about 6 × 10 16 atoms / cm 3 to about 3 × 10 21 atoms / cm 3 . The substrate is then annealed at a temperature ranging from about 700 ° C. to about 950 ° C. to obtain the desired dopant profile. |
| priorityDate | 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.