| abstract |
Provided is a CSP mounting semiconductor device having a high resistance to stress while being able to avoid an error caused by? -rays.n n n A buried oxide film 107 is formed on the semiconductor substrate 101, and a MOS transistor showing an SOI structure is formed on the buried oxide film 107. The MOS transistor is composed of source and drain regions 120a and 120b formed in the semiconductor layer 120 and a gate electrode 110. On the interlayer insulating film 108, an aluminum pad 103 connected to any one of the source and drain regions 120a and 120b by a connection mechanism (not shown), and a silicon nitride film 104 opening the upper portion of the aluminum pad 103 are provided. Formed. A titanium layer 105 and a nickel layer 106 are formed from the aluminum pad 103 to the silicon nitride film 104, and solder bumps 11 are provided on the nickel layer 106. |