http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990070024-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate | 1998-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990070024-A |
| titleOfInvention | Well Forming Method of Semiconductor Device |
| abstract | The present invention relates to a method for forming a well of a semiconductor device, and more particularly, to a method for forming a well of a semiconductor device suitable for critically forming a boundary between wells. Such a well forming method of a semiconductor device may include preparing a semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a photoreactive material layer on the insulating film, and selectively exposing the photoreactive material layer. Forming a hole by dry etching the photoreactive material layer of the unexposed portion; oxidizing the photoreactive material layer to form an oxide film; and forming a first conductive well in the semiconductor substrate under the hole. Forming a photoresist film, selectively forming a photoresist film in the hole, removing the oxide film, and forming a second conductivity type well in the semiconductor substrate under both sides of the photoresist film. |
| priorityDate | 1998-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70434 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544406 |
Total number of triples: 11.