http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990069116-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1998-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990069116-A |
| titleOfInvention | Method of removing photoresist for manufacturing single electronic device |
| abstract | The present invention relates to the removal of the photosensitive film after the pattern formation of the titanium thin film used as the pattern of the metal single-electron device. The method of removing the photoresist for fabricating a single electronic device according to the present invention removes the photoresist by using an oxygen plasma ashing process to solve the difficulty of removing the photoresist due to the material affinity of titanium. Titanium oxide is removed using sulfuric acid to obtain a photoresist-free titanium thin film. |
| priorityDate | 1998-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.