http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990062234-A
Outgoing Links
| Predicate | Object |
|---|---|
| filingDate | 1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990062234-A |
| titleOfInvention | Device Separation Method of Semiconductor Devices |
| abstract | The present invention relates to an isolation process for a semiconductor device, and more particularly, to sequentially depositing a pad oxide film and a nitride film on a semiconductor substrate, and depositing a device isolation mask having contact portions having a predetermined gap on the nitride film; Forming a trench in which the nitride film is etched to a predetermined depth through the contact portion, removing the device isolation mask, and depositing a spacer film in the trench at a predetermined thickness; Etching the spacer film after the step to form spacers on both inner wall surfaces of the trench; After the above step, the nitride film is etched to expose the pad oxide film, and the spacer is etched to compensate for the loss of the trench. Thus, the semiconductor substrate is prevented from being affected by the plasma by the plasma treatment process. It is a very useful and effective invention to improve the isolation characteristics of the device to improve the yield. |
| priorityDate | 1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 8.